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| (R) BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON s s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON WITH INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) LOW BASE-DRIVE REQUIREMENTS COST AND SPACE SAVING. 3 2 1 APPLICATIONS s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU808DFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 o C St orage Temperature Max. Operating Junction Temperature Value 1400 700 5 8 10 3 6 52 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 November 1998 BU808DFI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.4 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEX I EBO V CE(sat ) V BE(s at) h F E Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (V BE = -5V) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain INDUCTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time Test Cond ition s V CE = 1400 V V CE = 1000 V V EB = 5 V IC = 5 A IC = 5 A IC = 5 A IC = 5 A IB = 0.5 A IB = 0.5 A V CE = 5 V V CE = 5 V 60 20 Min. Typ . Max. 400 400 100 1.6 2.1 270 Un it A A mA V V T j = 100 oC ts tf ts tf VF V CC = 150 V I B1 = 0.5 A V CC = 150 V I B1 = 0.5 A o T j = 100 C IC = 5 A VBEoff = -5 V IC = 5 A VBEoff = -5 V 3 0.8 2 0.8 3 s s s s V Diode F orward Voltage I F = 5 A Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/7 BU808DFI Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time Inductive Load at 16KHz 3/7 BU808DFI Switching Time Inductive Load at 16KHZ Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at both 16 KHz scanning frequencies for choosing the optimum negative drive. The test circuit is illustrated in figure 1. Inductance L 1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 1 L (IC)2 = C (VCEfly)2 = 2 f = 2 2 L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. 4/7 BU808DFI Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/7 BU808DFI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 6/7 BU808DFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 7/7 |
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